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XPS study of nitrogen-implanted ZnO thin films obtained by DC-Magnetron reactive plasma

  • N. Tabet*
  • , M. Faiz
  • , A. Al-Oteibi
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

102 Scopus citations

Abstract

We have synthesized pure and N-doped ZnO films by reactive plasma in a DC-Magnetron sputtering system. Nitrogen was implanted by using an ion gun attached to an electron spectrometer. The films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) to investigate their composition and microstructure. XPS revealed the presence of two well-resolved peaks in N 1s spectra at about 396.2 and 404.3 eV. The peak at 404.3 eV has been assigned to zinc nitrite while the peak at 396.2 eV to zinc nitride. After annealing the sample at 250 °C in air for 1 h, one single peak, located at 399.1 eV, was observed. We suggest that this is due to the decomposition of nitrite and the formation of oxynitride.

Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume163
Issue number1-3
DOIs
StatePublished - Apr 2008

Bibliographical note

Funding Information:
This work was funded by King Fahd University of Petroleum and Minerals under contract FT/2002-03. The authors thank KFUPM for its support. SEM and XRD work was carried out in the Mechanical Engineering Department.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • DC sputtering
  • Nitrogen doping
  • XPS
  • ZnO thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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