Abstract
We have synthesized pure and N-doped ZnO films by reactive plasma in a DC-Magnetron sputtering system. Nitrogen was implanted by using an ion gun attached to an electron spectrometer. The films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) to investigate their composition and microstructure. XPS revealed the presence of two well-resolved peaks in N 1s spectra at about 396.2 and 404.3 eV. The peak at 404.3 eV has been assigned to zinc nitrite while the peak at 396.2 eV to zinc nitride. After annealing the sample at 250 °C in air for 1 h, one single peak, located at 399.1 eV, was observed. We suggest that this is due to the decomposition of nitrite and the formation of oxynitride.
| Original language | English |
|---|---|
| Pages (from-to) | 15-18 |
| Number of pages | 4 |
| Journal | Journal of Electron Spectroscopy and Related Phenomena |
| Volume | 163 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Apr 2008 |
Bibliographical note
Funding Information:This work was funded by King Fahd University of Petroleum and Minerals under contract FT/2002-03. The authors thank KFUPM for its support. SEM and XRD work was carried out in the Mechanical Engineering Department.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- DC sputtering
- Nitrogen doping
- XPS
- ZnO thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry
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