Abstract
X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.
Original language | English |
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Pages (from-to) | 415-420 |
Number of pages | 6 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 114-116 |
DOIs | |
State | Published - Mar 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry