X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

M. Faiz; N. Tabet; A. Mekki; B. S. Mun; Z. Hussain

doi:10.1016/j.tsf.2006.03.044

X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

M. Faiz^*
, N. Tabet
, A. Mekki
, B. S. Mun
, Z. Hussain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO₂) formation at 15% V doping. O K edge spectra show V 3d-O 2p and Zn 4d-O 2p hybridization, and suggest that V⁴⁺ acts as electron donor that fills the σ* band.

Original language	English
Pages (from-to)	1377-1379
Number of pages	3
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.03.044
State	Published - 5 Dec 2006

Bibliographical note

Funding Information:
This work was partially supported by the US Department of Energy under contract number DE-AC03-76F00098. Faiz, Tabet and Mekki would like to thank KFUPM for its support.

Keywords

DC-sputtering
Thin films
Vanadium doping
XANES
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2006.03.044

Cite this

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title = "X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films",

abstract = "X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15\% V doping. O K edge spectra show V 3d-O 2p and Zn 4d-O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band.",

keywords = "DC-sputtering, Thin films, Vanadium doping, XANES, ZnO",

author = "M. Faiz and N. Tabet and A. Mekki and Mun, \{B. S.\} and Z. Hussain",

note = "Funding Information: This work was partially supported by the US Department of Energy under contract number DE-AC03-76F00098. Faiz, Tabet and Mekki would like to thank KFUPM for its support.",

year = "2006",

month = dec,

day = "5",

doi = "10.1016/j.tsf.2006.03.044",

language = "English",

volume = "515",

pages = "1377--1379",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

number = "4",

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TY - JOUR

T1 - X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

AU - Faiz, M.

AU - Tabet, N.

AU - Mekki, A.

AU - Mun, B. S.

AU - Hussain, Z.

N1 - Funding Information: This work was partially supported by the US Department of Energy under contract number DE-AC03-76F00098. Faiz, Tabet and Mekki would like to thank KFUPM for its support.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d-O 2p and Zn 4d-O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band.

AB - X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d-O 2p and Zn 4d-O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band.

KW - DC-sputtering

KW - Thin films

KW - Vanadium doping

KW - XANES

KW - ZnO

UR - https://www.scopus.com/pages/publications/33750804189

U2 - 10.1016/j.tsf.2006.03.044

DO - 10.1016/j.tsf.2006.03.044

M3 - Article

AN - SCOPUS:33750804189

SN - 0040-6090

VL - 515

SP - 1377

EP - 1379

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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