Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process

Firoz Khan; Seong Ho Baek; Jae Young Lee; Jae Hyun Kim

doi:10.1016/j.jallcom.2015.05.243

Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process

Firoz Khan, Seong Ho Baek, Jae Young Lee, Jae Hyun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Effect of incorporation of Ag on the structural, optical, electrical, and fluorescence properties of sol-gel derived Al-rich zinc oxide (ZnO:Al:Ag) nanostructured films was studied. The E_g of the film slightly decreased to a minimal value with Ag doping, and was found to be about 3.65 eV for R_Ag/Zn = 1% from its initial value of 3.72 eV (R_Ag/Zn = 0%). The WF sudden increased to a maximal value of 5.12 eV with Ag doping (for R_Ag/Zn = 1%) from its initial value of 4.73 eV for R_Ag/Zn = 0% due to substitution of Ag into Zn sites until saturation was achieved (R_Ag/Zn = 1%). After more Ag doping, WF started to decrease and finally, reached a value of 4.81 eV for R_Ag/Zn = 3% because of the formation of an impurity-defect energy level below the intrinsic Fermi level of ZnO. With Ag-doping, the current increased up to R_Ag/Zn = 1% due to the increase in carrier density. For R_Ag/Zn = 3% doping, the current density started to increase due to the influence of metallic Ag. The defective peak position was blue shifted, with increased Ag-doping, from 536 nm (R_Ag/Zn = 1%) to 527 nm for R_Ag/Zn = 2% due to the sizes of the Ag⁺ and Zn²⁺ ions. The FL defective peak intensity (I_D) in the green region increased with the concentration of Ag used for doping, up to R_Ag/Zn = 2%. The enhancement in the I_D may be due to charge difference between the Zn²⁺ ions, caused by Ag⁺ ions.

Original language	English
Pages (from-to)	566-572
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	647
DOIs	https://doi.org/10.1016/j.jallcom.2015.05.243
State	Published - 1 Jul 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Absorption
Optical band-gap
Sol-gel process
Thin films
Work function

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2015.05.243

Cite this

@article{a9d1d18bd0d2459da7ce58d782b61d9e,

title = "Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process",

abstract = "Effect of incorporation of Ag on the structural, optical, electrical, and fluorescence properties of sol-gel derived Al-rich zinc oxide (ZnO:Al:Ag) nanostructured films was studied. The Eg of the film slightly decreased to a minimal value with Ag doping, and was found to be about 3.65 eV for RAg/Zn = 1\% from its initial value of 3.72 eV (RAg/Zn = 0\%). The WF sudden increased to a maximal value of 5.12 eV with Ag doping (for RAg/Zn = 1\%) from its initial value of 4.73 eV for RAg/Zn = 0\% due to substitution of Ag into Zn sites until saturation was achieved (RAg/Zn = 1\%). After more Ag doping, WF started to decrease and finally, reached a value of 4.81 eV for RAg/Zn = 3\% because of the formation of an impurity-defect energy level below the intrinsic Fermi level of ZnO. With Ag-doping, the current increased up to RAg/Zn = 1\% due to the increase in carrier density. For RAg/Zn = 3\% doping, the current density started to increase due to the influence of metallic Ag. The defective peak position was blue shifted, with increased Ag-doping, from 536 nm (RAg/Zn = 1\%) to 527 nm for RAg/Zn = 2\% due to the sizes of the Ag+ and Zn2+ ions. The FL defective peak intensity (ID) in the green region increased with the concentration of Ag used for doping, up to RAg/Zn = 2\%. The enhancement in the ID may be due to charge difference between the Zn2+ ions, caused by Ag+ ions.",

keywords = "Absorption, Optical band-gap, Sol-gel process, Thin films, Work function",

author = "Firoz Khan and Baek, \{Seong Ho\} and Lee, \{Jae Young\} and Kim, \{Jae Hyun\}",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.jallcom.2015.05.243",

language = "English",

volume = "647",

pages = "566--572",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

}

TY - JOUR

T1 - Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process

AU - Khan, Firoz

AU - Baek, Seong Ho

AU - Lee, Jae Young

AU - Kim, Jae Hyun

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Effect of incorporation of Ag on the structural, optical, electrical, and fluorescence properties of sol-gel derived Al-rich zinc oxide (ZnO:Al:Ag) nanostructured films was studied. The Eg of the film slightly decreased to a minimal value with Ag doping, and was found to be about 3.65 eV for RAg/Zn = 1% from its initial value of 3.72 eV (RAg/Zn = 0%). The WF sudden increased to a maximal value of 5.12 eV with Ag doping (for RAg/Zn = 1%) from its initial value of 4.73 eV for RAg/Zn = 0% due to substitution of Ag into Zn sites until saturation was achieved (RAg/Zn = 1%). After more Ag doping, WF started to decrease and finally, reached a value of 4.81 eV for RAg/Zn = 3% because of the formation of an impurity-defect energy level below the intrinsic Fermi level of ZnO. With Ag-doping, the current increased up to RAg/Zn = 1% due to the increase in carrier density. For RAg/Zn = 3% doping, the current density started to increase due to the influence of metallic Ag. The defective peak position was blue shifted, with increased Ag-doping, from 536 nm (RAg/Zn = 1%) to 527 nm for RAg/Zn = 2% due to the sizes of the Ag+ and Zn2+ ions. The FL defective peak intensity (ID) in the green region increased with the concentration of Ag used for doping, up to RAg/Zn = 2%. The enhancement in the ID may be due to charge difference between the Zn2+ ions, caused by Ag+ ions.

AB - Effect of incorporation of Ag on the structural, optical, electrical, and fluorescence properties of sol-gel derived Al-rich zinc oxide (ZnO:Al:Ag) nanostructured films was studied. The Eg of the film slightly decreased to a minimal value with Ag doping, and was found to be about 3.65 eV for RAg/Zn = 1% from its initial value of 3.72 eV (RAg/Zn = 0%). The WF sudden increased to a maximal value of 5.12 eV with Ag doping (for RAg/Zn = 1%) from its initial value of 4.73 eV for RAg/Zn = 0% due to substitution of Ag into Zn sites until saturation was achieved (RAg/Zn = 1%). After more Ag doping, WF started to decrease and finally, reached a value of 4.81 eV for RAg/Zn = 3% because of the formation of an impurity-defect energy level below the intrinsic Fermi level of ZnO. With Ag-doping, the current increased up to RAg/Zn = 1% due to the increase in carrier density. For RAg/Zn = 3% doping, the current density started to increase due to the influence of metallic Ag. The defective peak position was blue shifted, with increased Ag-doping, from 536 nm (RAg/Zn = 1%) to 527 nm for RAg/Zn = 2% due to the sizes of the Ag+ and Zn2+ ions. The FL defective peak intensity (ID) in the green region increased with the concentration of Ag used for doping, up to RAg/Zn = 2%. The enhancement in the ID may be due to charge difference between the Zn2+ ions, caused by Ag+ ions.

KW - Absorption

KW - Optical band-gap

KW - Sol-gel process

KW - Thin films

KW - Work function

UR - https://www.scopus.com/pages/publications/84933566498

U2 - 10.1016/j.jallcom.2015.05.243

DO - 10.1016/j.jallcom.2015.05.243

M3 - Article

AN - SCOPUS:84933566498

SN - 0925-8388

VL - 647

SP - 566

EP - 572

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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