Voltage-Controlled Tunneling Magnetoresistance Using Ferroelectric Tunnel Barriers

Ferroelectric tunnel barriers enable voltage-controlled modulation of tunneling magnetoresistance (TMR) by introducing switchable electric polarization into magnetic tunnel junctions. In this work, MTJs incorporating ferroelectric perovskite barriers are investigated using a numerical tunneling model based on the WKB approximation. Ferroelectric polarization modifies the effective tunneling barrier asymmetrically, producing reversible changes in spin-dependent conductance at fixed device geometry. The results demonstrate non-volatile electrical control of TMR, highlighting the potential of ferroelectric barriers as an active element for multifunctional spintronic devices.