Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

N. N. Bao; J. B. Yi; H. M. Fan; X. B. Qin; P. Zhang; B. Y. Wang; J. Ding; S. Li

doi:10.1016/j.scriptamat.2012.02.031

Vacancy-induced room-temperature ferromagnetism in Ga-TiO ₂

N. N. Bao, J. B. Yi^*, H. M. Fan, X. B. Qin, P. Zhang, B. Y. Wang, J. Ding, S. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ga-TiO ₂ films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO ₂ doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed.

Original language	English
Pages (from-to)	821-824
Number of pages	4
Journal	Scripta Materialia
Volume	66
Issue number	10
DOIs	https://doi.org/10.1016/j.scriptamat.2012.02.031
State	Published - May 2012
Externally published	Yes

Keywords

Diluted magnetic semiconductor
Room-temperature ferromagnetism
TiO
Vacancy

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2012.02.031

Cite this

@article{6d5252a150c24b6587e5764fcd8b0a98,

title = "Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2 ",

abstract = "Ga-TiO 2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO 2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed.",

keywords = "Diluted magnetic semiconductor, Room-temperature ferromagnetism, TiO, Vacancy",

author = "Bao, \{N. N.\} and Yi, \{J. B.\} and Fan, \{H. M.\} and Qin, \{X. B.\} and P. Zhang and Wang, \{B. Y.\} and J. Ding and S. Li",

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language = "English",

volume = "66",

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journal = "Scripta Materialia",

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T1 - Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

AU - Bao, N. N.

AU - Yi, J. B.

AU - Fan, H. M.

AU - Qin, X. B.

AU - Zhang, P.

AU - Wang, B. Y.

AU - Ding, J.

AU - Li, S.

PY - 2012/5

Y1 - 2012/5

N2 - Ga-TiO 2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO 2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed.

AB - Ga-TiO 2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO 2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed.

KW - Diluted magnetic semiconductor

KW - Room-temperature ferromagnetism

KW - TiO

KW - Vacancy

UR - https://www.scopus.com/pages/publications/84862786923

U2 - 10.1016/j.scriptamat.2012.02.031

DO - 10.1016/j.scriptamat.2012.02.031

M3 - Article

AN - SCOPUS:84862786923

SN - 1359-6462

VL - 66

SP - 821

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JF - Scripta Materialia

IS - 10

ER -