Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme

Ahmed Reda Mohamed; Mingyi Chen; Guoxing Wang

doi:10.1109/ISCAS.2019.8702293

Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme

Ahmed Reda Mohamed
, Mingyi Chen
, Guoxing Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

21 Scopus citations

Abstract

This paper presents an untrimmed stable CMOS Nano-Ampere current reference over a wide temperature range with curvature-compensation scheme which is realized by utility self-biased CMOS -multiplier circuit and operating near to zero-temperature coefficient of MOSFET. Besides, analysis of the proposed circuit is illustrated. The current reference is 142.5 nA with temperature coefficient (TC) of 40 ppm/ ℃ over a temperature range from -40 ℃ to 85 ℃ and the line sensitivity is 1.45 %/V in a range of supply voltage from 1.2 V to 2 V. The proposed current reference consumes a silicon area of 0.02 mm² and simulation results of the post-layout reveal that the current reference and the TC are deviated by 0.2 nA and 0.69 ppm/℃, respectively. The proposed circuit is designed and taped-out in 0.18 CMOS technology with single supply voltage of 1.8 V.

Original language	English
Title of host publication	2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728103976
DOIs	https://doi.org/10.1109/ISCAS.2019.8702293
State	Published - 2019
Externally published	Yes

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2019-May
ISSN (Print)	0271-4310

Bibliographical note

Publisher Copyright:
© 2019 IEEE

Keywords

CMOS -multiplier circuit
Current reference
Curvature-compensation scheme
Zero-temperature coefficient

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISCAS.2019.8702293

Cite this

Mohamed, A. R., Chen, M., & Wang, G. (2019). Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme. In 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings Article 8702293 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2019-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2019.8702293

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title = "Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme",

abstract = "This paper presents an untrimmed stable CMOS Nano-Ampere current reference over a wide temperature range with curvature-compensation scheme which is realized by utility self-biased CMOS -multiplier circuit and operating near to zero-temperature coefficient of MOSFET. Besides, analysis of the proposed circuit is illustrated. The current reference is 142.5 nA with temperature coefficient (TC) of 40 ppm/ ℃ over a temperature range from -40 ℃ to 85 ℃ and the line sensitivity is 1.45 \%/V in a range of supply voltage from 1.2 V to 2 V. The proposed current reference consumes a silicon area of 0.02 mm2 and simulation results of the post-layout reveal that the current reference and the TC are deviated by 0.2 nA and 0.69 ppm/℃, respectively. The proposed circuit is designed and taped-out in 0.18 CMOS technology with single supply voltage of 1.8 V.",

keywords = "CMOS -multiplier circuit, Current reference, Curvature-compensation scheme, Zero-temperature coefficient",

author = "Mohamed, \{Ahmed Reda\} and Mingyi Chen and Guoxing Wang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE",

year = "2019",

doi = "10.1109/ISCAS.2019.8702293",

language = "English",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings",

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Mohamed, AR, Chen, M & Wang, G 2019, Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme. in 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings., 8702293, Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2019-May, Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISCAS.2019.8702293

Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme. / Mohamed, Ahmed Reda; Chen, Mingyi; Wang, Guoxing.
2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8702293 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme

AU - Mohamed, Ahmed Reda

AU - Chen, Mingyi

AU - Wang, Guoxing

PY - 2019

Y1 - 2019

N2 - This paper presents an untrimmed stable CMOS Nano-Ampere current reference over a wide temperature range with curvature-compensation scheme which is realized by utility self-biased CMOS -multiplier circuit and operating near to zero-temperature coefficient of MOSFET. Besides, analysis of the proposed circuit is illustrated. The current reference is 142.5 nA with temperature coefficient (TC) of 40 ppm/ ℃ over a temperature range from -40 ℃ to 85 ℃ and the line sensitivity is 1.45 %/V in a range of supply voltage from 1.2 V to 2 V. The proposed current reference consumes a silicon area of 0.02 mm2 and simulation results of the post-layout reveal that the current reference and the TC are deviated by 0.2 nA and 0.69 ppm/℃, respectively. The proposed circuit is designed and taped-out in 0.18 CMOS technology with single supply voltage of 1.8 V.

AB - This paper presents an untrimmed stable CMOS Nano-Ampere current reference over a wide temperature range with curvature-compensation scheme which is realized by utility self-biased CMOS -multiplier circuit and operating near to zero-temperature coefficient of MOSFET. Besides, analysis of the proposed circuit is illustrated. The current reference is 142.5 nA with temperature coefficient (TC) of 40 ppm/ ℃ over a temperature range from -40 ℃ to 85 ℃ and the line sensitivity is 1.45 %/V in a range of supply voltage from 1.2 V to 2 V. The proposed current reference consumes a silicon area of 0.02 mm2 and simulation results of the post-layout reveal that the current reference and the TC are deviated by 0.2 nA and 0.69 ppm/℃, respectively. The proposed circuit is designed and taped-out in 0.18 CMOS technology with single supply voltage of 1.8 V.

KW - CMOS -multiplier circuit

KW - Current reference

KW - Curvature-compensation scheme

KW - Zero-temperature coefficient

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DO - 10.1109/ISCAS.2019.8702293

M3 - Conference contribution

AN - SCOPUS:85066805196

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

BT - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Untrimmed CMOS nano-ampere current reference with curvature-compensation scheme

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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