Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20 2 ¯ 1) AlGaN/GaN buffer layers

Erin C. Young; Benjamin P. Yonkee; Feng Wu; Burhan K. Saifaddin; Daniel A. Cohen; Steve P. Denbaars; Shuji Nakamura; James S. Speck

doi:10.1016/j.jcrysgro.2015.02.081

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20 2 ¯ 1) AlGaN/GaN buffer layers

Erin C. Young^*
, Benjamin P. Yonkee
, Feng Wu
, Burhan K. Saifaddin
, Daniel A. Cohen
, Steve P. Denbaars
, Shuji Nakamura
, James S. Speck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274 nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-V) characteristics.

Original language	English
Pages (from-to)	389-392
Number of pages	4
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.081
State	Published - 28 Jul 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© Published by Elsevier B.V.

Keywords

A3 Molecular beam epitaxy
B1 Nitrides
B2 Semiconducting gallium compounds
B3 Light emitting diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2015.02.081

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title = "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20 2 ¯ 1) AlGaN/GaN buffer layers",

abstract = "In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274 nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-V) characteristics.",

keywords = "A3 Molecular beam epitaxy, B1 Nitrides, B2 Semiconducting gallium compounds, B3 Light emitting diodes",

author = "Young, \{Erin C.\} and Yonkee, \{Benjamin P.\} and Feng Wu and Saifaddin, \{Burhan K.\} and Cohen, \{Daniel A.\} and Denbaars, \{Steve P.\} and Shuji Nakamura and Speck, \{James S.\}",

note = "Publisher Copyright: {\textcopyright} Published by Elsevier B.V.",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.081",

language = "English",

volume = "425",

pages = "389--392",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20 2 ¯ 1) AlGaN/GaN buffer layers

AU - Young, Erin C.

AU - Yonkee, Benjamin P.

AU - Wu, Feng

AU - Saifaddin, Burhan K.

AU - Cohen, Daniel A.

AU - Denbaars, Steve P.

AU - Nakamura, Shuji

AU - Speck, James S.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274 nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-V) characteristics.

AB - In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia assisted molecular beam epitaxy (MBE). Misfit and related threading dislocations were confined to the stress relaxed, compositionally graded buffer layers, and single quantum well devices emitting at 355, 310 and 274 nm were grown on top of the graded buffers. The devices showed excellent structural and electrical (I-V) characteristics.

KW - A3 Molecular beam epitaxy

KW - B1 Nitrides

KW - B2 Semiconducting gallium compounds

KW - B3 Light emitting diodes

UR - https://www.scopus.com/pages/publications/84979959755

U2 - 10.1016/j.jcrysgro.2015.02.081

DO - 10.1016/j.jcrysgro.2015.02.081

M3 - Article

AN - SCOPUS:84979959755

SN - 0022-0248

VL - 425

SP - 389

EP - 392

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (20 2 ¯ 1) AlGaN/GaN buffer layers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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