Tunneling through Double Electrostatic Barriers in Strained Graphene

Herein, the electronic structure of Dirac fermions scattered by double barrier potential in graphene under strain effect is studied. It is shown that traction and compression strains can be used to generate fermion beam collimation, 1D transport channels, surface states, and confinement. The corresponding transmission probability and conductance at zero temperature are calculated and their numerical computations are performed taking into account various alterations of physical parameters, enabling the analysis of some important features of the system. It is shown that the transmissions satisfy three symmetry relations depending on the incident angle and strain parameters, while the conductance is reduced compared to that of the strained single barrier.