Tuning the Two-Dimensional Electron Gas at Oxide Interfaces with Ti-O Configurations: Evidence from X-ray Photoelectron Spectroscopy

Yu Zhang, Yulin Gan, Wei Niu, Kion Norrman, Xi Yan, Dennis Valbjørn Christensen, Merlin Von Soosten, Hongrui Zhang, Baogen Shen, Nini Pryds, Jirong Sun*, Yunzhong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

A chemical redox reaction can lead to a two-dimensional electron gas at the interface between a TiO2-terminated SrTiO3 (STO) substrate and an amorphous LaAlO3 capping layer. When replacing the STO substrate with rutile and anatase TiO2 substrates, considerable differences in the interfacial conduction are observed. On the basis of X-ray photoelectron spectroscopy (XPS) and transport measurements, we conclude that the interfacial conduction comes from redox reactions, and that the differences among the materials systems result mainly from variations in the activation energies for the diffusion of oxygen vacancies at substrate surfaces.

Original languageEnglish
Pages (from-to)1434-1439
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number1
DOIs
StatePublished - 10 Jan 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

  • SrTiO
  • TiO
  • oxygen vacancies
  • redox reaction
  • two-dimensional electron gas

ASJC Scopus subject areas

  • General Materials Science

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