Tuning photoresponse of graphene-black phosphorus heterostructure by electrostatic gating and photo-induced doping

Metal-semiconductor diodes constructed from two-dimensional (2D) van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction, which can be exploited to make highly sensitive photodetector. Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene (Gr) on a few-layer black phosphorus (BP). Due to the presence of a built-in potential barrier (~0.09 ± 0.03 eV) at the Gr-BP interface, the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%, and the external quantum efficiency (EQE) increases to 648% from 84% of the bare BP. Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction. We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping. The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits.