Abstract
Vanadium dioxide (VO2) featuring a distinct thermally triggered phase transition is regarded as the most attractive thermochromic material for smart window applications. However, the high transition temperature (?67 °C) and moderate luminous transmittance (<50%) of the pristine VO2 circumvent room temperature applications. In this work, epitaxial cobalt-doped VO2 thin films were fabricated to tailor the electric and optical properties on a c-plane sapphire substrate. At the highest doping concentration of 10%, the transition temperature of VO2 is reduced to 44 °C, accompanied by a high luminous transmittance of 79% for single-element Co-doped VO2. The roles of cobalt doping and detailed band variation are fully explained experimentally and by modeling (DFT calculation), respectively. Furthermore, the dramatically increased carrier concentration in cobalt-doped VO2 underscores the promising future of cobalt-doped VO2 unveiled by temperature-dependent Hall effect measurement.
| Original language | English |
|---|---|
| Pages (from-to) | 19736-19746 |
| Number of pages | 11 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 14 |
| Issue number | 17 |
| DOIs | |
| State | Published - 4 May 2022 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2022 American Chemical Society.
Keywords
- Raman spectroscopy
- cobalt doping
- luminous transmittance
- phase transition
- vanadium dioxide
ASJC Scopus subject areas
- General Materials Science
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