Tunable self-injection locked green laser diode

Md Hosne Mobarok Shamim; Tien Khee Ng; Boon S. Ooi; Mohammed Zahed Mustafa Khan

doi:10.1364/OL.43.004931

Tunable self-injection locked green laser diode

Md Hosne Mobarok Shamim
, Tien Khee Ng
, Boon S. Ooi
, Mohammed Zahed Mustafa Khan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10-528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤ 100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.

Original language	English
Pages (from-to)	4931-4934
Number of pages	4
Journal	Optics Letters
Volume	43
Issue number	20
DOIs	https://doi.org/10.1364/OL.43.004931
State	Published - 15 Oct 2018

Bibliographical note

Funding Information:
King Fahd University of Petroleum and Minerals (KFUPM) (KAUST004); King Abdulaziz City for Science and Technology (KACST) (EE2381, KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01); KAUST-KFUPM Special Initiative (KKI) Program.

Publisher Copyright:
© 2018 Optical Society of America.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.43.004931

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@article{2196ca093e49492ea1fcc9a79c490697,

title = "Tunable self-injection locked green laser diode",

abstract = "We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10-528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤ 100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.",

author = "Shamim, \{Md Hosne Mobarok\} and Ng, \{Tien Khee\} and Ooi, \{Boon S.\} and Khan, \{Mohammed Zahed Mustafa\}",

note = "Funding Information: King Fahd University of Petroleum and Minerals (KFUPM) (KAUST004); King Abdulaziz City for Science and Technology (KACST) (EE2381, KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01); KAUST-KFUPM Special Initiative (KKI) Program. Publisher Copyright: {\textcopyright} 2018 Optical Society of America.",

year = "2018",

month = oct,

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doi = "10.1364/OL.43.004931",

language = "English",

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journal = "Optics Letters",

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T1 - Tunable self-injection locked green laser diode

AU - Shamim, Md Hosne Mobarok

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Khan, Mohammed Zahed Mustafa

N1 - Funding Information: King Fahd University of Petroleum and Minerals (KFUPM) (KAUST004); King Abdulaziz City for Science and Technology (KACST) (EE2381, KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01); KAUST-KFUPM Special Initiative (KKI) Program. Publisher Copyright: © 2018 Optical Society of America.

PY - 2018/10/15

Y1 - 2018/10/15

N2 - We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10-528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤ 100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.

AB - We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10-528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤ 100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.

UR - https://www.scopus.com/pages/publications/85054888916

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DO - 10.1364/OL.43.004931

M3 - Article

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SN - 0146-9592

VL - 43

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EP - 4934

JO - Optics Letters

JF - Optics Letters

IS - 20

ER -

Tunable self-injection locked green laser diode

Abstract

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ASJC Scopus subject areas

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