Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode

Md Hosne Mobarok Shamim*, Omar Alkhazragi, Tien Khee Ng, Boon S. Ooi, Mohammed Zahed Mustafa Khan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521-528 nm) laser diode by employing a self-injection locking scheme that is based on an external cavity configuration and utilizing either a high or partial-reflecting mirror. A tunable longitudinal-mode spacing of 0.20 - 5.96 nm was accomplished, corresponding to a calculated frequency difference of 0.22-6.51 THz, as a result. The influence of operating current and temperature on the system performance was also investigated with a measured maximum side-mode-suppression ratio of 30.4 dB and minimum dual-mode peak optical power ratio of 0.03 dB. To shed light on the operation of the dual-wavelength device arising from the tunable longitudinal-mode spacing mechanism, the underlying physics is qualitatively described. To the best of our knowledge, this tunable longitudinal-mode-spacing dual-wavelength device is novel, and has potential applications as an alternative means in millimeter wave and THz generation, thus possibly addressing the terahertz technology gap. The dual-wavelength operation is also attractive for high-resolution imaging and broadband wireless communication.

Original languageEnglish
Article number8853286
Pages (from-to)143324-143330
Number of pages7
JournalIEEE Access
Volume7
DOIs
StatePublished - 2019

Bibliographical note

Funding Information:
Corresponding authors: Md Hosne Mobarok Shamim ([email protected]) and Mohammed Zahed Mustafa Khan ([email protected]) This work was supported in part by the King Fahd University of Petroleum and Minerals (KFUPM), in part by the King Abdulaziz City for Science and Technology (KACST) under Grant EE2381 and Grant KACST TIC R2-FP-008, in part by the King Abdullah University of Science and Technology (KAUST) baseline funding under Grant BAS/1/1614-01-01, Grant KCR/1/2081-01-01, and Grant GEN/1/6607-01-01), and in part by the KAUST-KFUPM Special Initiative (KKI) Program under Grant REP/1/2878-01-01.

Publisher Copyright:
© 2013 IEEE.

Keywords

  • Dual wavelength lasers
  • InGaN/GaN visible lasers
  • optical injection locking
  • semiconductor lasers

ASJC Scopus subject areas

  • General Computer Science
  • General Materials Science
  • General Engineering

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