Transport properties of Bi-related nanowire systems

Y. M. Lin; S. B. Cronin; J. Y. Ying; J. Heremans; M. S. Dresselhaus

doi:10.1557/proc-635-c4.30

Transport properties of Bi-related nanowire systems

Y. M. Lin^*, S. B. Cronin, J. Y. Ying, J. Heremans, M. S. Dresselhaus

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We present here an electrical transport property study of Te-doped Bi nanowires, and Bi_1-xSb_x alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi_1-xSb_x alloy nanowires at low temperatures (T < 4 K).

Original language	English
Pages (from-to)	C4301-C4306
Journal	Materials Research Society Symposium - Proceedings
Volume	635
DOIs	https://doi.org/10.1557/proc-635-c4.30
State	Published - 2001
Externally published	Yes
Event	Anisotropic Nanoparticles-Synthesis, Characterization and Applications - Boston, MA, United States Duration: 27 Nov 2000 → 29 Nov 2000

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{b7a291f0afb947d6a37701c105159572,

title = "Transport properties of Bi-related nanowire systems",

abstract = "We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1-xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1-xSbx alloy nanowires at low temperatures (T < 4 K).",

author = "Lin, \{Y. M.\} and Cronin, \{S. B.\} and Ying, \{J. Y.\} and J. Heremans and Dresselhaus, \{M. S.\}",

year = "2001",

doi = "10.1557/proc-635-c4.30",

language = "English",

volume = "635",

pages = "C4301--C4306",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Anisotropic Nanoparticles-Synthesis, Characterization and Applications ; Conference date: 27-11-2000 Through 29-11-2000",

}

TY - JOUR

T1 - Transport properties of Bi-related nanowire systems

AU - Lin, Y. M.

AU - Cronin, S. B.

AU - Ying, J. Y.

AU - Heremans, J.

AU - Dresselhaus, M. S.

PY - 2001

Y1 - 2001

N2 - We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1-xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1-xSbx alloy nanowires at low temperatures (T < 4 K).

AB - We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1-xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K≤ T ≤ 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1-xSbx alloy nanowires at low temperatures (T < 4 K).

UR - https://www.scopus.com/pages/publications/0034822283

U2 - 10.1557/proc-635-c4.30

DO - 10.1557/proc-635-c4.30

M3 - Conference article

AN - SCOPUS:0034822283

SN - 0272-9172

VL - 635

SP - C4301-C4306

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Anisotropic Nanoparticles-Synthesis, Characterization and Applications

Y2 - 27 November 2000 through 29 November 2000

ER -

Transport properties of Bi-related nanowire systems

Abstract

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