Abstract
Temperature-dependent resistance measurements of Bi-related nanowire arrays with different wire diameters and Sb concentrations are performed. The variation in the measured R(T) curves of these nanowires is closely related to the unique semimetal-semiconductor transition in Bi, and the results are explained by theoretical simulations. It is found that the special feature of the maximum in the resistance ratio R(10 K)/R(100 K) can be employed to experimentally identify the conditions for the semimetal-semiconductor transition.
| Original language | English |
|---|---|
| Pages (from-to) | 383-388 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 737 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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