Abstract
This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO 2 ) films in the terahertz (THz) frequency range, namely the transition temperature T IMT , the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO 2 monoclinic structure with an enhancement of (011) preferential orientation when varying the O 2 pressure (P O2 ) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO 2 films obtained at low P O2 exhibit low T IMT , large ΔA, and narrow ΔH. Increasing P O2 results in VO 2 films with higher T IMT , smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO 2 IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.
| Original language | English |
|---|---|
| Pages (from-to) | 377-383 |
| Number of pages | 7 |
| Journal | Applied Surface Science |
| Volume | 379 |
| DOIs | |
| State | Published - 30 Aug 2016 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2016 Published by Elsevier B.V.
Keywords
- Grain growth
- Metal-to-insulator transition
- Reactive pulsed lased deposition
- Terahertz technology
- Thermochromic VO
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films