Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

Joanna M. Nassar; Aftab M. Hussain; Jhonathan P. Rojas; Muhammad M. Hussain

doi:10.1109/NANO.2014.6968081

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

Joanna M. Nassar, Aftab M. Hussain, Jhonathan P. Rojas, Muhammad M. Hussain

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Original language	English
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	176-179
Number of pages	4
ISBN (Electronic)	9781479956227
DOIs	https://doi.org/10.1109/NANO.2014.6968081
State	Published - 26 Nov 2014
Externally published	Yes

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Electronic)	1944-9399

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation
Instrumentation

Access to Document

10.1109/NANO.2014.6968081

Cite this

Nassar, J. M., Hussain, A. M., Rojas, J. P., & Hussain, M. M. (2014). Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100). In Proceedings of the IEEE Conference on Nanotechnology (pp. 176-179). Article 6968081 (Proceedings of the IEEE Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968081

@inproceedings{d71629a636f54d05b2a182c71c2c3b21,

title = "Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)",

abstract = "Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.",

author = "Nassar, {Joanna M.} and Hussain, {Aftab M.} and Rojas, {Jhonathan P.} and Hussain, {Muhammad M.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = nov,

day = "26",

doi = "10.1109/NANO.2014.6968081",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "176--179",

booktitle = "Proceedings of the IEEE Conference on Nanotechnology",

address = "United States",

}

Nassar, JM, Hussain, AM, Rojas, JP & Hussain, MM 2014, Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100). in Proceedings of the IEEE Conference on Nanotechnology., 6968081, Proceedings of the IEEE Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 176-179. https://doi.org/10.1109/NANO.2014.6968081

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100). / Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan P. et al.
Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2014. p. 176-179 6968081 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

AU - Nassar, Joanna M.

AU - Hussain, Aftab M.

AU - Rojas, Jhonathan P.

AU - Hussain, Muhammad M.

PY - 2014/11/26

Y1 - 2014/11/26

N2 - Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

AB - Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

UR - http://www.scopus.com/inward/record.url?scp=84919479601&partnerID=8YFLogxK

U2 - 10.1109/NANO.2014.6968081

DO - 10.1109/NANO.2014.6968081

M3 - Conference contribution

AN - SCOPUS:84919479601

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 176

EP - 179

BT - Proceedings of the IEEE Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

Abstract

Publication series

Bibliographical note

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this