Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

A. Sandell; M. P. Anderson; Y. Alfredsson; M. K.J. Johansson; J. Schnadt; H. Rensmo; H. Siegbahn; P. Uvdal

doi:10.1063/1.1501751

Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

A. Sandell^*, M. P. Anderson, Y. Alfredsson, M. K.J. Johansson, J. Schnadt, H. Rensmo, H. Siegbahn, P. Uvdal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The initial stages of TiO ₂ growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO ₂ film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500°C. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO ₂ are discussed. Three different stages are identified: In the initial stage (film thickness <10 Å), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Å) is best described as an amorphous TiSi _xO _y compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Å) a stoichiometric TiO ₂ layer starts to form. The TiO ₂ phase is anatase and the layer consists of particles ∼10 nm wide.

Original language	English
Pages (from-to)	3381-3387
Number of pages	7
Journal	Journal of Applied Physics
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.1501751
State	Published - 15 Sep 2002
Externally published	Yes

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General Physics and Astronomy

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@article{64043f25255a47babfcbe50293d7c7d4,

title = "Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide",

abstract = "The initial stages of TiO 2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO 2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500°C. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO 2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 {\AA}), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 {\AA}) is best described as an amorphous TiSi xO y compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 {\AA}) a stoichiometric TiO 2 layer starts to form. The TiO 2 phase is anatase and the layer consists of particles ∼10 nm wide.",

author = "A. Sandell and Anderson, \{M. P.\} and Y. Alfredsson and Johansson, \{M. K.J.\} and J. Schnadt and H. Rensmo and H. Siegbahn and P. Uvdal",

year = "2002",

month = sep,

day = "15",

doi = "10.1063/1.1501751",

language = "English",

volume = "92",

pages = "3381--3387",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

AU - Sandell, A.

AU - Anderson, M. P.

AU - Alfredsson, Y.

AU - Johansson, M. K.J.

AU - Schnadt, J.

AU - Rensmo, H.

AU - Siegbahn, H.

AU - Uvdal, P.

PY - 2002/9/15

Y1 - 2002/9/15

N2 - The initial stages of TiO 2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO 2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500°C. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO 2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Å), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Å) is best described as an amorphous TiSi xO y compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Å) a stoichiometric TiO 2 layer starts to form. The TiO 2 phase is anatase and the layer consists of particles ∼10 nm wide.

AB - The initial stages of TiO 2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO 2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500°C. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO 2 are discussed. Three different stages are identified: In the initial stage (film thickness <10 Å), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (<25 Å) is best described as an amorphous TiSi xO y compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (>30 Å) a stoichiometric TiO 2 layer starts to form. The TiO 2 phase is anatase and the layer consists of particles ∼10 nm wide.

UR - https://www.scopus.com/pages/publications/18644369602

U2 - 10.1063/1.1501751

DO - 10.1063/1.1501751

M3 - Article

AN - SCOPUS:18644369602

SN - 0021-8979

VL - 92

SP - 3381

EP - 3387

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

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