TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

P. G. Karlsson; J. H. Richter; M. P. Andersson; M. K.J. Johansson; J. Blomquist; P. Uvdal; A. Sandell

doi:10.1016/j.susc.2011.03.001

TiO₂ chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

P. G. Karlsson
, J. H. Richter
, M. P. Andersson
, M. K.J. Johansson
, J. Blomquist
, P. Uvdal
, A. Sandell^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 × 7), SiO_x/Si(111) and TiO₂. These surfaces represent the different surface compositions encountered during TTIP mediated TiO₂ chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.

Original language	English
Pages (from-to)	1147-1156
Number of pages	10
Journal	Surface Science
Volume	605
Issue number	13-14
DOIs	https://doi.org/10.1016/j.susc.2011.03.001
State	Published - Jul 2011
Externally published	Yes

Bibliographical note

Funding Information:
We thank the staff at MAX-lab for their excellent assistance. This work was financially funded by the Swedish Science Council (VR), the Crafoord Foundation , the Göran Gustafsson Foundation and the Swedish Foundation for Strategic Research (SSF).

Keywords

Chemical vapor deposition
Crystalline-amorphous interfaces
Growth
Low index single crystal surfaces
Scanning tunneling microscopy
Synchrotron radiation photoelectron spectroscopy
Titanium dioxide
X-ray absorption spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.susc.2011.03.001

Cite this

@article{0044cad6603b4f40b76589ae34b9057b,

title = "TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime",

abstract = "The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 × 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.",

keywords = "Chemical vapor deposition, Crystalline-amorphous interfaces, Growth, Low index single crystal surfaces, Scanning tunneling microscopy, Synchrotron radiation photoelectron spectroscopy, Titanium dioxide, X-ray absorption spectroscopy",

author = "Karlsson, \{P. G.\} and Richter, \{J. H.\} and Andersson, \{M. P.\} and Johansson, \{M. K.J.\} and J. Blomquist and P. Uvdal and A. Sandell",

note = "Funding Information: We thank the staff at MAX-lab for their excellent assistance. This work was financially funded by the Swedish Science Council (VR), the Crafoord Foundation , the G{\"o}ran Gustafsson Foundation and the Swedish Foundation for Strategic Research (SSF).",

year = "2011",

month = jul,

doi = "10.1016/j.susc.2011.03.001",

language = "English",

volume = "605",

pages = "1147--1156",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV",

number = "13-14",

}

TY - JOUR

T1 - TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum

T2 - Transition from interfacial phase to crystalline phase in the reaction limited regime

AU - Karlsson, P. G.

AU - Richter, J. H.

AU - Andersson, M. P.

AU - Johansson, M. K.J.

AU - Blomquist, J.

AU - Uvdal, P.

AU - Sandell, A.

N1 - Funding Information: We thank the staff at MAX-lab for their excellent assistance. This work was financially funded by the Swedish Science Council (VR), the Crafoord Foundation , the Göran Gustafsson Foundation and the Swedish Foundation for Strategic Research (SSF).

PY - 2011/7

Y1 - 2011/7

N2 - The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 × 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.

AB - The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 × 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.

KW - Chemical vapor deposition

KW - Crystalline-amorphous interfaces

KW - Growth

KW - Low index single crystal surfaces

KW - Scanning tunneling microscopy

KW - Synchrotron radiation photoelectron spectroscopy

KW - Titanium dioxide

KW - X-ray absorption spectroscopy

UR - https://www.scopus.com/pages/publications/79957853862

U2 - 10.1016/j.susc.2011.03.001

DO - 10.1016/j.susc.2011.03.001

M3 - Article

AN - SCOPUS:79957853862

SN - 0039-6028

VL - 605

SP - 1147

EP - 1156

JO - Surface Science

JF - Surface Science

IS - 13-14

ER -