Thermal transport in a silicon/diamond micro-flake with quantum dots inserts

Non-equilibrium thermal energy transfer in small scale films pairs, composing of different film materials, is important for designing semiconductor devices or thermoelectric energy generators. The present study examines thermal energy transfer in low size silicon-diamond film pairs with the quantum dots in placed. Equation for Phonon Radiative Transport (EPRT) is used to predict the distribution of phonon intensities via adopting the discrete ordinate method. Thermal energy transport is quantified in the form phonon energies via using integral form of equilibrium phonon intensities. Because of the mismatch of properties between silicon and diamond films, interface conditions are formulated after considering energy balance across both films. Findings reveal that equivalent equilibrium temperature decays gradually in the film for small size quantum dots. As the quantum dot size increases, equivalent equilibrium temperature decays sharply because films edges behave like heat sink reducing equilibrium phonon intensities in the region of film edges. Temperature jump, due to mismatch properties of the films, signifies at the mid-section of the interface and it increases slightly with increasing quantum dot size. The magnitude of heat flux vector remains higher in diamond than silicon film. The effective thermal conductivity predicted is in agreement with the previous data for silicon film.