Thermal analysis of ultra-broadband lasing InAs/InP quantum-dash lasers

  • E. Alkhazraji
  • , M. T.A. Khan
  • , M. A. Shemis
  • , M. Z.M. Khan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermal analysis of InAs/InP quantum-dash lasers revealed ∼6(45)°C/W thermal resistance value for 15(2)μm ridge-width devices, thus exhibiting an inverse relationship. This further affirms thermionic emission process being responsible for enhanced lasing-bandwidth for narrow ridge-width devices.

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference, ACP 2017
PublisherOSA - The Optical Society
ISBN (Electronic)9781943580347
ISBN (Print)9781943580347
DOIs
StatePublished - 9 Aug 2017

Publication series

NameAsia Communications and Photonics Conference, ACP
Volume2017-August
ISSN (Print)2162-108X

Bibliographical note

Funding Information:
The authors would like to acknowledge the support from King Fahd University of Petroleum and Minerals, in part, through grant SR141002, and in part by KACST-TIC in SSL.

Publisher Copyright:
© OSA 2017.

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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