Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

M. Z.M. Khan*, Tien K. Ng, U. Schwingenschlogl, Boon S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers.

Original languageEnglish
Title of host publication11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
Pages149-150
Number of pages2
DOIs
StatePublished - 2011
Externally publishedYes

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)2158-3234

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modeling and Simulation

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