The electrical conductivity of thin films using GeO2 as the dielectric material

M. N. Khan; M. I. Khan; C. A. Hogarth

doi:10.1002/pssa.2210610129

The electrical conductivity of thin films using GeO₂ as the dielectric material

M. N. Khan^*, M. I. Khan, C. A. Hogarth

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Measurements are made on thin films using GeO₂ as the dielectric material and for thickness ranges from 130 to 2000 Å. The electrical conductivities are measured as a function of temperature. Efforts are made to investigate the current‐voltage characteristics which are interpreted in terms of a Schottky emission conduction mechanism.

Original language	English
Pages (from-to)	251-257
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	61
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2210610129
State	Published - 16 Sep 1980

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssa.2210610129

Cite this

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title = "The electrical conductivity of thin films using GeO2 as the dielectric material",

abstract = "Measurements are made on thin films using GeO2 as the dielectric material and for thickness ranges from 130 to 2000 {\AA}. The electrical conductivities are measured as a function of temperature. Efforts are made to investigate the current‐voltage characteristics which are interpreted in terms of a Schottky emission conduction mechanism.",

author = "Khan, {M. N.} and Khan, {M. I.} and Hogarth, {C. A.}",

year = "1980",

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AU - Khan, M. I.

AU - Hogarth, C. A.

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N2 - Measurements are made on thin films using GeO2 as the dielectric material and for thickness ranges from 130 to 2000 Å. The electrical conductivities are measured as a function of temperature. Efforts are made to investigate the current‐voltage characteristics which are interpreted in terms of a Schottky emission conduction mechanism.

AB - Measurements are made on thin films using GeO2 as the dielectric material and for thickness ranges from 130 to 2000 Å. The electrical conductivities are measured as a function of temperature. Efforts are made to investigate the current‐voltage characteristics which are interpreted in terms of a Schottky emission conduction mechanism.

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