Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor

Ahmed Reda Mohamed; Guoxing Wang

doi:10.1016/j.mejo.2020.104820

Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor

Ahmed Reda Mohamed, Guoxing Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 μm CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.

Original language	English
Article number	104820
Journal	Microelectronics Journal
Volume	102
DOIs	https://doi.org/10.1016/j.mejo.2020.104820
State	Published - Aug 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Elsevier Ltd

Keywords

Chip fabrication and measurement
Integrated circuit
Temperature compensation scheme
Tunable pseudo-resistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2020.104820

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title = "Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor",

abstract = "Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 μm CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.",

keywords = "Chip fabrication and measurement, Integrated circuit, Temperature compensation scheme, Tunable pseudo-resistor",

author = "Mohamed, \{Ahmed Reda\} and Guoxing Wang",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = aug,

doi = "10.1016/j.mejo.2020.104820",

language = "English",

volume = "102",

journal = "Microelectronics Journal",

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T1 - Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor

AU - Mohamed, Ahmed Reda

AU - Wang, Guoxing

PY - 2020/8

Y1 - 2020/8

N2 - Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 μm CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.

AB - Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 μm CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.

KW - Chip fabrication and measurement

KW - Integrated circuit

KW - Temperature compensation scheme

KW - Tunable pseudo-resistor

UR - https://www.scopus.com/pages/publications/85085620772

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DO - 10.1016/j.mejo.2020.104820

M3 - Article

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JO - Microelectronics Journal

JF - Microelectronics Journal

M1 - 104820

ER -

Temperature effect and compensation scheme for tunable ultra-high-resistance pseudo resistor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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