Abstract
Phonon transport in two-layer films, consisting of silicon and aluminum, is considered. Phonon radiative energy transfer is incorporated to predict equilibrium temperature distribution in the silicon film, while the modified two-equation model is used to predict electron and phonon temperatures in the aluminum film. The thermal boundary resistance is introduced at the interface of both films. Equilibrium temperature decay is found to be sharp in the early heating period in the silicon film. Phonon temperature remains higher than electron temperature in the vicinity of the interface of aluminum film. Electron and phonon temperature become the same at mid-thickness of the aluminum film.
| Original language | English |
|---|---|
| Pages (from-to) | 153-181 |
| Number of pages | 29 |
| Journal | Transport Theory and Statistical Physics |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2011 |
Bibliographical note
Funding Information:The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals. Dhahran, Saudi Arabia for this work.
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Mathematical Physics
- Transportation
- General Physics and Astronomy
- Applied Mathematics