Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light

M. Ismail Hossain*, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Hideki Hirayama

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nonradiative recombination (NRR) processes through defect states and their temperature dependence in UV-B AlGaN MQW sample on sapphire substrate grown by MOCVD technique have been studied by photoluminescence (PL) spectroscopy. We detected NRR centers by adding a below-gap excitation light with photon energies from 0.93 eV to 1.46 eV on an above-gap excitation light of 4.66 eV. All the BGE energies decreased PL intensity at 25 K, and the most-distinct quenching is observed by 1.27 eV BGE at the same BGE photon number density. The temperature-dependent PL intensity for the BGE energy of 1.27 eV is interpreted by three NRR centers. The one-level model dominates over that of two-level model in the temperature range 58 K < T < 88 K. The two-level model prevails in other region of temperature. The combination of one-level and two-level models is consistent with the spectral peak-energy shift as a function of temperature.

Original languageEnglish
Article number109878
JournalOptical Materials
Volume105
DOIs
StatePublished - Jul 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

  • AlGaN
  • Nonradiative recombination center
  • Quantum well
  • Recombination model
  • Two-wavelength excited photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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