Temperature dependence of external differential quantum efficiency of GaN-based blue laser diode

Watheq Al-Basheer*, Abdulaziz Aljalal, Khaled Gasmi, Taofeek O. Adigun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


The external differential quantum efficiency, defined as the ratio of number of photons emitted per unit time to number of carriers passing the laser diode junction, is known to be sensitive to laser diode's operating temperature. In this paper, high-resolution spectral emissions of a commercially available GaN-based blue laser diode are measured and utilized to study the effect of temperature on the external differential quantum efficiency and over the operating temperature range of 270-330 °K. Upon studying the L-I curves and over the full range of laser diode's operating current and temperature, three distinct temperature regimes of the quantum efficiency were identified with the regime of temperature range 285-301 °K yielding the highest temperature stability. In addition to experimentally determining the characteristic temperature of the laser diode, the effect of non-radiative recombination and free carrier absorption processes on external differential quantum efficiency will be discussed.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Laser Dynamics VIII
EditorsRainer Michalzik, Krassimir Panajotov, Marc Sciamanna
ISBN (Electronic)9781510618909
StatePublished - 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Bibliographical note

Publisher Copyright:
© 2018 SPIE.


  • Blue laser diode
  • External Differential Quantum Efficiency
  • Gallium Nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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