Synthesis of ultra-long and highly oriented silicon oxide nanowires from liquid alloys

B. Zheng; Y. Wu; P. Yang; J. Liu

doi:10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V

Synthesis of ultra-long and highly oriented silicon oxide nanowires from liquid alloys

B. Zheng^*
, Y. Wu
, P. Yang
, J. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

166 Scopus citations

Abstract

Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO₂, which induces the precipitation of the wires.

Original language	English
Pages (from-to)	122-124
Number of pages	3
Journal	Advanced Materials
Volume	14
Issue number	2
DOIs	https://doi.org/10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V
State	Published - 16 Jan 2002

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V

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abstract = "Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO2, which induces the precipitation of the wires.",

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AU - Yang, P.

AU - Liu, J.

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Y1 - 2002/1/16

N2 - Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO2, which induces the precipitation of the wires.

AB - Long and highly ordered amorphous silicon oxide nanowires (see Figure) have been prepared in bulk quantities by these authors. The wires formed on a Ga ball placed on top of a Si wafer, which acted as a source for the nanowires, in a quartz tube. The growth can be explained by dissolution of Si in molten Ga, followed by oxidation to SiO2, which induces the precipitation of the wires.

UR - https://www.scopus.com/pages/publications/0037116546

U2 - 10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V

DO - 10.1002/1521-4095(20020116)14:2<122::AID-ADMA122>3.0.CO;2-V

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JO - Advanced Materials

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Synthesis of ultra-long and highly oriented silicon oxide nanowires from liquid alloys

Abstract

ASJC Scopus subject areas

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