Synthesis of TiO2 mesoporous film with the effect of 200 eV argon ion beam on its surface chemistry

Talal F. Qahtan; Taoreed O. Owolabi; Tawfik A. Saleh

doi:10.1016/j.optmat.2023.114103

Synthesis of TiO₂ mesoporous film with the effect of 200 eV argon ion beam on its surface chemistry

Talal F. Qahtan
, Taoreed O. Owolabi
, Tawfik A. Saleh^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This work presents an elegant and systematic method to study the effect of a 200 eV Ar ion beam on TiO₂ semiconductor mesopores film. Argon ion beam (Ar⁺) of 200 eV energy was irradiated on the prepared TiO₂ film (thickness ∼ 20 μm) at different irradiation times of 0, 150, 250, 350, and 450 s. The irradiated samples were subsequently characterized using x-ray photoelectron spectroscopy (XPS). The survey spectrum reveals the presence of elemental composition of titanium (Ti 2p), oxygen (O 1s), and carbon (C 1s). The compositional ratio of Ti³⁺/Ti⁴⁺ increases and lattice oxygen/Ti 2p decreases with an increase in irradiation time which confirms the creation of oxygen vacancy as the irradiation time progresses. The demonstrated oxygen vacancy induction potentials would be highly meritorious in enhancing the photocatalytic activity of the semiconductor under visible light for various applications.

Original language	English
Article number	114103
Journal	Optical Materials
Volume	142
DOIs	https://doi.org/10.1016/j.optmat.2023.114103
State	Published - Aug 2023

Bibliographical note

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

Argon ion beam
Oxygen vacancy
Photocatalytic activity
TiO
XPS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.optmat.2023.114103

Cite this

@article{5f60af33790b4cf9940fe4f9dbb5d2ab,

title = "Synthesis of TiO2 mesoporous film with the effect of 200 eV argon ion beam on its surface chemistry",

abstract = "This work presents an elegant and systematic method to study the effect of a 200 eV Ar ion beam on TiO2 semiconductor mesopores film. Argon ion beam (Ar+) of 200 eV energy was irradiated on the prepared TiO2 film (thickness ∼ 20 μm) at different irradiation times of 0, 150, 250, 350, and 450 s. The irradiated samples were subsequently characterized using x-ray photoelectron spectroscopy (XPS). The survey spectrum reveals the presence of elemental composition of titanium (Ti 2p), oxygen (O 1s), and carbon (C 1s). The compositional ratio of Ti3+/Ti4+ increases and lattice oxygen/Ti 2p decreases with an increase in irradiation time which confirms the creation of oxygen vacancy as the irradiation time progresses. The demonstrated oxygen vacancy induction potentials would be highly meritorious in enhancing the photocatalytic activity of the semiconductor under visible light for various applications.",

keywords = "Argon ion beam, Oxygen vacancy, Photocatalytic activity, TiO, XPS",

author = "Qahtan, \{Talal F.\} and Owolabi, \{Taoreed O.\} and Saleh, \{Tawfik A.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = aug,

doi = "10.1016/j.optmat.2023.114103",

language = "English",

volume = "142",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Synthesis of TiO2 mesoporous film with the effect of 200 eV argon ion beam on its surface chemistry

AU - Qahtan, Talal F.

AU - Owolabi, Taoreed O.

AU - Saleh, Tawfik A.

PY - 2023/8

Y1 - 2023/8

N2 - This work presents an elegant and systematic method to study the effect of a 200 eV Ar ion beam on TiO2 semiconductor mesopores film. Argon ion beam (Ar+) of 200 eV energy was irradiated on the prepared TiO2 film (thickness ∼ 20 μm) at different irradiation times of 0, 150, 250, 350, and 450 s. The irradiated samples were subsequently characterized using x-ray photoelectron spectroscopy (XPS). The survey spectrum reveals the presence of elemental composition of titanium (Ti 2p), oxygen (O 1s), and carbon (C 1s). The compositional ratio of Ti3+/Ti4+ increases and lattice oxygen/Ti 2p decreases with an increase in irradiation time which confirms the creation of oxygen vacancy as the irradiation time progresses. The demonstrated oxygen vacancy induction potentials would be highly meritorious in enhancing the photocatalytic activity of the semiconductor under visible light for various applications.

AB - This work presents an elegant and systematic method to study the effect of a 200 eV Ar ion beam on TiO2 semiconductor mesopores film. Argon ion beam (Ar+) of 200 eV energy was irradiated on the prepared TiO2 film (thickness ∼ 20 μm) at different irradiation times of 0, 150, 250, 350, and 450 s. The irradiated samples were subsequently characterized using x-ray photoelectron spectroscopy (XPS). The survey spectrum reveals the presence of elemental composition of titanium (Ti 2p), oxygen (O 1s), and carbon (C 1s). The compositional ratio of Ti3+/Ti4+ increases and lattice oxygen/Ti 2p decreases with an increase in irradiation time which confirms the creation of oxygen vacancy as the irradiation time progresses. The demonstrated oxygen vacancy induction potentials would be highly meritorious in enhancing the photocatalytic activity of the semiconductor under visible light for various applications.

KW - Argon ion beam

KW - Oxygen vacancy

KW - Photocatalytic activity

KW - TiO

KW - XPS

UR - https://www.scopus.com/pages/publications/85165353053

U2 - 10.1016/j.optmat.2023.114103

DO - 10.1016/j.optmat.2023.114103

M3 - Article

AN - SCOPUS:85165353053

SN - 0925-3467

VL - 142

JO - Optical Materials

JF - Optical Materials

M1 - 114103

ER -