Synthesis of large areas of highly oriented, very long silicon nanowires

The synthesis of highly oriented, large scale, and very long silicon nanowires on flat silicon substrates by thermal evaporation of silicon monoxide is reported. The growth mechanism and optical properties of the oriented silicon nanowires are also discussed. The growth area of the oriented silicon nanowires characterized by scanning electron microscopy was about 2 mm×3 mm. The thickness of the nanowire product was about 10 μm. Transmission electron microscopy revealed that oriented silicon nanowires consisted of crystalline silicon cores covered by amorphous silicon oxide sheaths.