Abstract
ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.
| Original language | English |
|---|---|
| Pages (from-to) | e161-e164 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 24 SUPPL. |
| DOIs | |
| State | Published - 1 Oct 2010 |
Bibliographical note
Funding Information:The authors thank King Fahd University of Petroleum and Minerals (KFUPM) for its support. This work was supported by KFUPM , Project INT-2006/299 . The authors also thank Dr. X.N. Xie, NUS Nanoscience and Nanotechnology Initiative (NUSSI) , National university of Singapore for carrying out the AFM image.
Keywords
- Grain size
- Magnetron sputtering
- Working pressure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry