Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

  • Muhammad B. Haider
  • , Rong Yang
  • , Costel Constantin
  • , Erdong Lu
  • , Arthur R. Smith*
  • , Hamad A.H. Al-Brithen
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Cubic GaN has been grown under gallium (Ga)-rich growth conditions using radio frequency nitrogen plasma molecular beam epitaxy on MgO(001) substrates. Reflection high energy electron diffraction patterns indicate the smoothness of the c-GaN surface and show 2× and even 8× periodicities after the growth at sample temperature Ts <200 °C and 1×1 at higher temperatures. Scanning tunneling microscopy images reveal a sequence of variant surface reconstructions including c (4×12), 4×7, c (4×16), 4×9, c (4×20), and 4×11. These variant reconstructions correspond to slightly different Ga adatom coverages all less than 14 ML, with 4×11 having the highest, and c (4×12) the lowest Ga coverage. The electronic properties of these six variant reconstructions are investigated, and they are found to have a metallic nature.

Original languageEnglish
Article number083516
JournalJournal of Applied Physics
Volume100
Issue number8
DOIs
StatePublished - 2006
Externally publishedYes

Bibliographical note

Funding Information:
The material presented here is based upon work supported by the National Science Foundation under Grant Nos. 9983816 and 0304314. Support is also acknowledged from the Office of Naval Research Grant No. N00014-99-1-0528.

ASJC Scopus subject areas

  • General Physics and Astronomy

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