Abstract
Cubic GaN has been grown under gallium (Ga)-rich growth conditions using radio frequency nitrogen plasma molecular beam epitaxy on MgO(001) substrates. Reflection high energy electron diffraction patterns indicate the smoothness of the c-GaN surface and show 2× and even 8× periodicities after the growth at sample temperature Ts <200 °C and 1×1 at higher temperatures. Scanning tunneling microscopy images reveal a sequence of variant surface reconstructions including c (4×12), 4×7, c (4×16), 4×9, c (4×20), and 4×11. These variant reconstructions correspond to slightly different Ga adatom coverages all less than 14 ML, with 4×11 having the highest, and c (4×12) the lowest Ga coverage. The electronic properties of these six variant reconstructions are investigated, and they are found to have a metallic nature.
| Original language | English |
|---|---|
| Article number | 083516 |
| Journal | Journal of Applied Physics |
| Volume | 100 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |
Bibliographical note
Funding Information:The material presented here is based upon work supported by the National Science Foundation under Grant Nos. 9983816 and 0304314. Support is also acknowledged from the Office of Naval Research Grant No. N00014-99-1-0528.
ASJC Scopus subject areas
- General Physics and Astronomy