Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

H. H. Alhashim; M. Z.M. Khan; M. A. Majid; T. K. Ng; B. S. Ooi

doi:10.1049/el.2015.1803

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

H. H. Alhashim
, M. Z.M. Khan
, M. A. Majid
, T. K. Ng
, B. S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070-1190 nm. The non-coated facet Fabry-Perot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm^-1), suitable for applications in frequency doubled green- yellow-orange laser realisation, gas sensing, metrology etc.

Original language	English
Pages (from-to)	1444-1445
Number of pages	2
Journal	Electronics Letters
Volume	51
Issue number	18
DOIs	https://doi.org/10.1049/el.2015.1803
State	Published - 3 Sep 2015
Externally published	Yes

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Publisher Copyright:
© 2015 The Institution of Engineering and Technology.

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2015.1803

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title = "Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers",

abstract = "Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89\%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070-1190 nm. The non-coated facet Fabry-Perot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm-1), suitable for applications in frequency doubled green- yellow-orange laser realisation, gas sensing, metrology etc.",

author = "Alhashim, \{H. H.\} and Khan, \{M. Z.M.\} and Majid, \{M. A.\} and Ng, \{T. K.\} and Ooi, \{B. S.\}",

note = "Publisher Copyright: {\textcopyright} 2015 The Institution of Engineering and Technology.",

year = "2015",

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doi = "10.1049/el.2015.1803",

language = "English",

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AU - Alhashim, H. H.

AU - Khan, M. Z.M.

AU - Majid, M. A.

AU - Ng, T. K.

AU - Ooi, B. S.

PY - 2015/9/3

Y1 - 2015/9/3

N2 - Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070-1190 nm. The non-coated facet Fabry-Perot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm-1), suitable for applications in frequency doubled green- yellow-orange laser realisation, gas sensing, metrology etc.

AB - Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070-1190 nm. The non-coated facet Fabry-Perot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm-1), suitable for applications in frequency doubled green- yellow-orange laser realisation, gas sensing, metrology etc.

UR - https://www.scopus.com/pages/publications/84940836527

U2 - 10.1049/el.2015.1803

DO - 10.1049/el.2015.1803

M3 - Article

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SP - 1444

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JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Abstract

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