STUDY OF THERMAL-VOLTAGE MEMORY EFFECTS IN M-I-M STRUCTURESWITH CO-EVAPORATED SIO/B₂O₃ AS THE INSULATOR MATERIAL.

THIN-FILM SANDWICH STRUCTURES OF CU-SIO/B//2O//3-CU WITH DIELECTRIC THICKNESSES OF THE ORDER OF 2000 A WERE PREPARED BYVACUUM EVAPORATION, AND CIRCULATING AND EMISSION CURRENTS WERE MEASURED AS FUNCTIONS OF THE APPLIED VOLTAGE. A THERMAL-VOLTAGE MEMORY EFFECT WAS RECORDED AND THE RELAXATION OF THEHIGH-IMPEDANCE MEMORY STATE WAS STUDIED. THE RESULTS ARE INTERPRETED IN TERMS OF THE FILAMENTARY GROWTH THEORY.