Study of electron-beam evaporated Sn-doped In2O3 films

S. M.A. Durrani; E. E. Khawaja; J. Shirokoff; M. A. Daous; G. D. Khattak; M. A. Salim; M. S. Hussain

doi:10.1016/0927-0248(96)00013-X

Study of electron-beam evaporated Sn-doped In₂O₃ films

S. M.A. Durrani^*
, E. E. Khawaja
, J. Shirokoff
, M. A. Daous
, G. D. Khattak
, M. A. Salim
, M. S. Hussain

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Electron beam evaporated Sn-doped In₂O₃ films have been prepared from the starting material with composition of (1 - x) In₂O₃ - -x SnO₂, where x=0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In=0.06 - -0.09. These results compare well with those reported in the literature for Sn-doped In₂O₃ films, prepared by pyrolitic (spray) method.

Original language	English
Pages (from-to)	37-47
Number of pages	11
Journal	Solar Energy Materials and Solar Cells
Volume	44
Issue number	1
DOIs	https://doi.org/10.1016/0927-0248(96)00013-X
State	Published - 30 Oct 1996

Bibliographical note

Funding Information:
This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.

Keywords

Atomic ratio
Electron beam evaporation
Resistivity minimum
Sn-doped InO films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/0927-0248(96)00013-X

Cite this

@article{a2838d3810c347a7ba7ed9266ee5854e,

title = "Study of electron-beam evaporated Sn-doped In2O3 films",

abstract = "Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 - x) In2O3 - -x SnO2, where x=0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In=0.06 - -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method.",

keywords = "Atomic ratio, Electron beam evaporation, Resistivity minimum, Sn-doped InO films",

author = "Durrani, \{S. M.A.\} and Khawaja, \{E. E.\} and J. Shirokoff and Daous, \{M. A.\} and Khattak, \{G. D.\} and Salim, \{M. A.\} and Hussain, \{M. S.\}",

note = "Funding Information: This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.",

year = "1996",

month = oct,

day = "30",

doi = "10.1016/0927-0248(96)00013-X",

language = "English",

volume = "44",

pages = "37--47",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Study of electron-beam evaporated Sn-doped In2O3 films

AU - Durrani, S. M.A.

AU - Khawaja, E. E.

AU - Shirokoff, J.

AU - Daous, M. A.

AU - Khattak, G. D.

AU - Salim, M. A.

AU - Hussain, M. S.

N1 - Funding Information: This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.

PY - 1996/10/30

Y1 - 1996/10/30

N2 - Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 - x) In2O3 - -x SnO2, where x=0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In=0.06 - -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method.

AB - Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 - x) In2O3 - -x SnO2, where x=0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In=0.06 - -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method.

KW - Atomic ratio

KW - Electron beam evaporation

KW - Resistivity minimum

KW - Sn-doped InO films

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U2 - 10.1016/0927-0248(96)00013-X

DO - 10.1016/0927-0248(96)00013-X

M3 - Article

AN - SCOPUS:0041538239

SN - 0927-0248

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