Study into laser short-pulse heating of a layered structure

Laser short-pulse heating of a lead-silicon-gold-layered structure is considered and non-equilibrium equation in the lattice and electron subsystems is formulated using the electron kinetic theory approach. The Seebeck coefficient in the metallic and silicon layers is also formulated. Electron and lattice site temperature rise in the subsystems and the Seebeck coefficients are computed for time exponentially decaying pulse. The study is extended to include the influence of the first layer (lead layer) thickness on temperature rise and the Seebeck coefficients. It is found that the lattice site temperature across the interface of the lead and silicon layers increases sharply. The Seebeck coefficient predicted in the silicon layer is higher than in the metallic layers in the structure.