Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

S. S. Majid; D. K. Shukla; F. Rahman; R. J. Choudhary; D. M. Phase

doi:10.1063/1.4917609

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

S. S. Majid
, D. K. Shukla
, F. Rahman
, R. J. Choudhary
, D. M. Phase

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present here the structural and electrical properties of the thin films of V ₂ O ₃ (Vanadium sesquioxide) and V ₅ O ₉ . Both these oxide phases, V ₂ O ₃ and V ₅ O ₉ , have beenachieved on (001) orientedSi substrate using the V ₂ O ₅ target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V ₂ O ₃ and V ₅ O ₉ phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V ₂ O ₃ and V ₅ O ₉ .

Original language	English
Title of host publication	Solid State Physics
Subtitle of host publication	Proceedings of the 59th DAE Solid State Physics Symposium 2014
Editors	R. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735413108
DOIs	https://doi.org/10.1063/1.4917609
State	Published - 24 Jun 2015
Externally published	Yes
Event	59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India Duration: 16 Dec 2014 → 20 Dec 2014

Publication series

Name	AIP Conference Proceedings
Volume	1665
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	59th DAE Solid State Physics Symposium, SSPS 2014
Country/Territory	India
City	Vellore, Tamilnadu
Period	16/12/14 → 20/12/14

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4917609

Cite this

Majid, S. S., Shukla, D. K., Rahman, F., Choudhary, R. J., & Phase, D. M. (2015). Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition. In R. Chitra, N. K. Sahoo, & D. Bhattacharyya (Eds.), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014 Article 030034 (AIP Conference Proceedings; Vol. 1665). American Institute of Physics Inc.. https://doi.org/10.1063/1.4917609

Majid, S. S. ; Shukla, D. K. ; Rahman, F. et al. / Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition. Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. editor / R. Chitra ; N. K. Sahoo ; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. (AIP Conference Proceedings).

@inproceedings{da33e187fb954c93a5de4fb0cb398f87,

title = "Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition",

abstract = " We present here the structural and electrical properties of the thin films of V 2 O 3 (Vanadium sesquioxide) and V 5 O 9 . Both these oxide phases, V 2 O 3 and V 5 O 9 , have beenachieved on (001) orientedSi substrate using the V 2 O 5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V 2 O 3 and V 5 O 9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V 2 O 3 and V 5 O 9 .",

author = "Majid, \{S. S.\} and Shukla, \{D. K.\} and F. Rahman and Choudhary, \{R. J.\} and Phase, \{D. M.\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.; 59th DAE Solid State Physics Symposium, SSPS 2014 ; Conference date: 16-12-2014 Through 20-12-2014",

year = "2015",

month = jun,

day = "24",

doi = "10.1063/1.4917609",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

editor = "R. Chitra and Sahoo, \{N. K.\} and Dibyendu Bhattacharyya",

booktitle = "Solid State Physics",

}

Majid, SS, Shukla, DK, Rahman, F, Choudhary, RJ & Phase, DM 2015, Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition. in R Chitra, NK Sahoo & D Bhattacharyya (eds), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014., 030034, AIP Conference Proceedings, vol. 1665, American Institute of Physics Inc., 59th DAE Solid State Physics Symposium, SSPS 2014, Vellore, Tamilnadu, India, 16/12/14. https://doi.org/10.1063/1.4917609

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition. / Majid, S. S.; Shukla, D. K.; Rahman, F. et al.
Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. ed. / R. Chitra; N. K. Sahoo; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. 030034 (AIP Conference Proceedings; Vol. 1665).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

AU - Majid, S. S.

AU - Shukla, D. K.

AU - Rahman, F.

AU - Choudhary, R. J.

AU - Phase, D. M.

PY - 2015/6/24

Y1 - 2015/6/24

N2 - We present here the structural and electrical properties of the thin films of V 2 O 3 (Vanadium sesquioxide) and V 5 O 9 . Both these oxide phases, V 2 O 3 and V 5 O 9 , have beenachieved on (001) orientedSi substrate using the V 2 O 5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V 2 O 3 and V 5 O 9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V 2 O 3 and V 5 O 9 .

AB - We present here the structural and electrical properties of the thin films of V 2 O 3 (Vanadium sesquioxide) and V 5 O 9 . Both these oxide phases, V 2 O 3 and V 5 O 9 , have beenachieved on (001) orientedSi substrate using the V 2 O 5 target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V 2 O 3 and V 5 O 9 phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulator transitions (MIT) for both the films, V 2 O 3 and V 5 O 9 .

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DO - 10.1063/1.4917609

M3 - Conference contribution

AN - SCOPUS:85063836368

T3 - AIP Conference Proceedings

BT - Solid State Physics

A2 - Chitra, R.

A2 - Sahoo, N. K.

A2 - Bhattacharyya, Dibyendu

PB - American Institute of Physics Inc.

T2 - 59th DAE Solid State Physics Symposium, SSPS 2014

Y2 - 16 December 2014 through 20 December 2014

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Majid SS, Shukla DK, Rahman F, Choudhary RJ, Phase DM. Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition. In Chitra R, Sahoo NK, Bhattacharyya D, editors, Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. American Institute of Physics Inc. 2015. 030034. (AIP Conference Proceedings). doi: 10.1063/1.4917609

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

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