Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan P. Rojas; Galo Torres Sevilla; Muhammad M. Hussain

doi:10.1063/1.4791693

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan P. Rojas^*, Galo Torres Sevilla, Muhammad M. Hussain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m^-1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, -0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

Original language	English
Article number	064102
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4791693
State	Published - 11 Feb 2013
Externally published	Yes

Bibliographical note

Funding Information:
We appreciate the generous baseline funding from King Abdullah University of Science and Technology. We also thank the support from the staffs in the KAUST Advanced Nanofabrication Facilities at the King Abdullah University of Science and Technology.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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abstract = "In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m-1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, -0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.",

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AU - Hussain, Muhammad M.

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Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Abstract

Bibliographical note

ASJC Scopus subject areas

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