Strong interlayer transition in a staggered gap GeSe/MoTe₂ heterojunction diode for highly efficient visible and near-infrared photodetection and logic inverter

Transition-metal dichalcogenides exhibit strong light–matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe₂ van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe₂. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron–hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of ~1.0 × 10⁴ A/W, an excellent detectivity of ~8.4 × 10¹² jones, and a fast rise and fall time of 458 and 498 μs, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe₂ is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices. (Figure presented.).