Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near-infrared photodetection and logic inverter

Syed Hassan Abbas Jaffery; Muhammad Riaz; Zeesham Abbas; Ghulam Dastgeer; Sikandar Aftab; Sajjad Hussain; Muhammad Ali; Jongwan Jung

doi:10.1002/eom2.12307

Strong interlayer transition in a staggered gap GeSe/MoTe₂ heterojunction diode for highly efficient visible and near-infrared photodetection and logic inverter

Syed Hassan Abbas Jaffery, Muhammad Riaz, Zeesham Abbas, Ghulam Dastgeer, Sikandar Aftab, Sajjad Hussain, Muhammad Ali^*, Jongwan Jung^*

^*Corresponding author for this work

Interdisciplinary Research Center for Hydrogen and Energy Storage

Research output: Contribution to journal › Article › peer-review

Abstract

Transition-metal dichalcogenides exhibit strong light–matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe₂ van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe₂. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron–hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of ~1.0 × 10⁴ A/W, an excellent detectivity of ~8.4 × 10¹² jones, and a fast rise and fall time of 458 and 498 μs, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe₂ is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices. (Figure presented.).

Original language	English
Article number	e12307
Journal	EcoMat
Volume	5
Issue number	3
DOIs	https://doi.org/10.1002/eom2.12307
State	Published - Mar 2023

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High‐Performance Computing for high throughput calculations.

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High-Performance Computing for high throughput calculations.

Funding Information:
Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Grant/Award Number: 2020R1A6A1A03043435; Ministry of Science and ICT, Grant/Award Number: 2022R1F1A1074324 Funding information

Publisher Copyright:
© 2022 The Authors. EcoMat published by The Hong Kong Polytechnic University and John Wiley & Sons Australia, Ltd.

Keywords

broadband photodetection
density functional theory
gate-dependent rectification
interlayer transition

ASJC Scopus subject areas

Chemistry (miscellaneous)
Physical and Theoretical Chemistry
Materials Science (miscellaneous)

Access to Document

10.1002/eom2.12307

Cite this

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title = "Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near-infrared photodetection and logic inverter",

abstract = "Transition-metal dichalcogenides exhibit strong light–matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe2 van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe2. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron–hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of ~1.0 × 104 A/W, an excellent detectivity of ~8.4 × 1012 jones, and a fast rise and fall time of 458 and 498 μs, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe2 is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices. (Figure presented.).",

keywords = "broadband photodetection, density functional theory, gate-dependent rectification, interlayer transition",

author = "Jaffery, {Syed Hassan Abbas} and Muhammad Riaz and Zeesham Abbas and Ghulam Dastgeer and Sikandar Aftab and Sajjad Hussain and Muhammad Ali and Jongwan Jung",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High‐Performance Computing for high throughput calculations. Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High-Performance Computing for high throughput calculations. Funding Information: Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Grant/Award Number: 2020R1A6A1A03043435; Ministry of Science and ICT, Grant/Award Number: 2022R1F1A1074324 Funding information Publisher Copyright: {\textcopyright} 2022 The Authors. EcoMat published by The Hong Kong Polytechnic University and John Wiley & Sons Australia, Ltd.",

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AU - Jaffery, Syed Hassan Abbas

AU - Riaz, Muhammad

AU - Abbas, Zeesham

AU - Dastgeer, Ghulam

AU - Aftab, Sikandar

AU - Hussain, Sajjad

AU - Ali, Muhammad

AU - Jung, Jongwan

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High‐Performance Computing for high throughput calculations. Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03043435) and by the Ministry of Science and ICT (2022R1F1A1074324). In addition, Muhammad Ali, one of the coauthors, would be grateful to the College of Petroleum Engineering & Geosciences of King Fahd University of Petroleum and Minerals for the facility of Alfahd High-Performance Computing for high throughput calculations. Funding Information: Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Grant/Award Number: 2020R1A6A1A03043435; Ministry of Science and ICT, Grant/Award Number: 2022R1F1A1074324 Funding information Publisher Copyright: © 2022 The Authors. EcoMat published by The Hong Kong Polytechnic University and John Wiley & Sons Australia, Ltd.

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N2 - Transition-metal dichalcogenides exhibit strong light–matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe2 van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe2. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron–hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of ~1.0 × 104 A/W, an excellent detectivity of ~8.4 × 1012 jones, and a fast rise and fall time of 458 and 498 μs, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe2 is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices. (Figure presented.).

AB - Transition-metal dichalcogenides exhibit strong light–matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe2 van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe2. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron–hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of ~1.0 × 104 A/W, an excellent detectivity of ~8.4 × 1012 jones, and a fast rise and fall time of 458 and 498 μs, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe2 is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices. (Figure presented.).

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