Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

Yiquan Dai; Shuiming Li; Hongwei Gao; Weihui Wang; Qian Sun; Qing Peng; Chengqun Gui; Zhengfang Qian; Sheng Liu

doi:10.1007/s10854-015-3984-1

Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

Yiquan Dai^*, Shuiming Li, Hongwei Gao, Weihui Wang, Qian Sun, Qing Peng, Chengqun Gui, Zhengfang Qian, Sheng Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.

Original language	English
Pages (from-to)	2004-2013
Number of pages	10
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	2
DOIs	https://doi.org/10.1007/s10854-015-3984-1
State	Published - 1 Feb 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015, Springer Science+Business Media New York.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling",

abstract = "We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.",

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T2 - experiments and theoretical modeling

AU - Dai, Yiquan

AU - Li, Shuiming

AU - Gao, Hongwei

AU - Wang, Weihui

AU - Sun, Qian

AU - Peng, Qing

AU - Gui, Chengqun

AU - Qian, Zhengfang

AU - Liu, Sheng

PY - 2016/2/1

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AB - We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.

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Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

Abstract

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