TY - GEN
T1 - Stress engineering in amorphous silicon thin films
AU - Johlin, Eric
AU - Castro-Galnares, Sebastián
AU - Abdallah, Amir
AU - Tabet, Nouar
AU - Bertoni, Mariana I.
AU - Asafa, Tesleem
AU - Grossman, Jeffrey C.
AU - Sayed, Said
AU - Buonassisi, Tonio
PY - 2011
Y1 - 2011
N2 - Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.
AB - Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.
UR - https://www.scopus.com/pages/publications/84861074315
U2 - 10.1109/PVSC.2011.6185874
DO - 10.1109/PVSC.2011.6185874
M3 - Conference contribution
AN - SCOPUS:84861074315
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 176
EP - 178
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
ER -
