Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene

Yao Ding; Qing Peng; Lin Gan; Ruizhe Wu; Xuewu Ou; Qicheng Zhang; Zhengtang Luo

doi:10.1021/acs.chemmater.5b04002

Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene

Yao Ding, Qing Peng, Lin Gan, Ruizhe Wu, Xuewu Ou, Qicheng Zhang, Zhengtang Luo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Atomic registry has a strong impact on the electronic structure and properties of graphene due to its localized strain and localized charge distribution. However, direct experimental evidence of a correlation between its physical structure and chemical reactivity is still lacking. Here, we report that the electron transfer chemistry is significantly modified in twisted bilayer graphene (tBLG) by investigating the results of chemical functionalization with diazonium salts. The relative reaction rate for grafting diazonium salts on tBLG is much faster than that on AB-stacking graphene. Gerischer-Marcus electron transfer theory analysis, along with electronic structure calculations, indicates that the different reactivities mainly result from distinct variations in the density-of-states distribution in the gap region. Our results suggest a venue to separate and sort different stacking modes of bilayer graphene for various promising applications in nanoelectronics.

Original language	English
Pages (from-to)	1034-1039
Number of pages	6
Journal	Chemistry of Materials
Volume	28
Issue number	4
DOIs	https://doi.org/10.1021/acs.chemmater.5b04002
State	Published - 23 Feb 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/acs.chemmater.5b04002

Cite this

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title = "Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene",

abstract = "Atomic registry has a strong impact on the electronic structure and properties of graphene due to its localized strain and localized charge distribution. However, direct experimental evidence of a correlation between its physical structure and chemical reactivity is still lacking. Here, we report that the electron transfer chemistry is significantly modified in twisted bilayer graphene (tBLG) by investigating the results of chemical functionalization with diazonium salts. The relative reaction rate for grafting diazonium salts on tBLG is much faster than that on AB-stacking graphene. Gerischer-Marcus electron transfer theory analysis, along with electronic structure calculations, indicates that the different reactivities mainly result from distinct variations in the density-of-states distribution in the gap region. Our results suggest a venue to separate and sort different stacking modes of bilayer graphene for various promising applications in nanoelectronics.",

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T1 - Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene

AU - Ding, Yao

AU - Peng, Qing

AU - Gan, Lin

AU - Wu, Ruizhe

AU - Ou, Xuewu

AU - Zhang, Qicheng

AU - Luo, Zhengtang

PY - 2016/2/23

Y1 - 2016/2/23

N2 - Atomic registry has a strong impact on the electronic structure and properties of graphene due to its localized strain and localized charge distribution. However, direct experimental evidence of a correlation between its physical structure and chemical reactivity is still lacking. Here, we report that the electron transfer chemistry is significantly modified in twisted bilayer graphene (tBLG) by investigating the results of chemical functionalization with diazonium salts. The relative reaction rate for grafting diazonium salts on tBLG is much faster than that on AB-stacking graphene. Gerischer-Marcus electron transfer theory analysis, along with electronic structure calculations, indicates that the different reactivities mainly result from distinct variations in the density-of-states distribution in the gap region. Our results suggest a venue to separate and sort different stacking modes of bilayer graphene for various promising applications in nanoelectronics.

AB - Atomic registry has a strong impact on the electronic structure and properties of graphene due to its localized strain and localized charge distribution. However, direct experimental evidence of a correlation between its physical structure and chemical reactivity is still lacking. Here, we report that the electron transfer chemistry is significantly modified in twisted bilayer graphene (tBLG) by investigating the results of chemical functionalization with diazonium salts. The relative reaction rate for grafting diazonium salts on tBLG is much faster than that on AB-stacking graphene. Gerischer-Marcus electron transfer theory analysis, along with electronic structure calculations, indicates that the different reactivities mainly result from distinct variations in the density-of-states distribution in the gap region. Our results suggest a venue to separate and sort different stacking modes of bilayer graphene for various promising applications in nanoelectronics.

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Stacking-Mode-Induced Reactivity Enhancement for Twisted Bilayer Graphene

Abstract

Bibliographical note

ASJC Scopus subject areas

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