Abstract
A new dual-Vt static CMOS circuits, the Split-Gate dual-Vt (SG-DVT) logic, are devised. Their performance is compared to that of all-low-Vt, all-high-Vt, and other dual-Vt circuits in terms of speed and energy consumption (both static and dynamic). They achieved speeds close to that of the all-low-Vt circuits, lower leakage (both stand-by and active) than other dual-Vt circuits, and lower leakage dependency on logic block input patterns.
| Original language | English |
|---|---|
| Pages (from-to) | IV798-IV801 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 626 |
| State | Published - 2001 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering