Spin lattice relaxation of 8Li in a ferromagnetic EuO epitaxial thin film

Q. Song*, K. H. Chow, M. Egilmez, I. Fan, M. D. Hossain, R. F. Kiefl, S. R. Kreitzman, C. D.P. Levy, G. D. Morris, T. J. Parolin, M. R. Pearson, Z. Salman, H. Saadaoui, M. Smadella, D. Wang, N. J.C. Ingle, W. A. MacFarlane

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We inject a low energy spin polarized 8Li+ beam into an epitaxially grown multilayer film consisting of Au(20 nm)/EuO(100 nm)/LaAlO3, and investigate the nuclear spin relaxation at 3.33 T. The relaxation varies with implantation energy below 28 keV as the fraction of the probe 8Li stopping in each layer changes. We attribute the fast relaxating component to the EuO, while the much slower relaxation has contributions from both the Au and the substrate. However, fast relaxation is still observed at the lowest implantation energy where all the 8Li stops in the Au capping layer. This may be due to a proximity effect from the EuO.

Original languageEnglish
Pages (from-to)619-621
Number of pages3
JournalPhysica B: Condensed Matter
Volume404
Issue number5-7
DOIs
StatePublished - 15 Apr 2009
Externally publishedYes

Keywords

  • EuO
  • Low energy muons
  • Magnetism
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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