Abstract
Single and two-stage self-injection locking in InGaN/GaN laser diode is presented. Near single-mode emission with 34pm linewidth, and simultaneous locking of four longitudinal modes with appreciable 18dB SMSR and <2.5dB peak power ratio is achieved.
| Original language | English |
|---|---|
| Title of host publication | CLEO |
| Subtitle of host publication | Applications and Technology, CLEO_AT 2020 |
| Publisher | Optica Publishing Group (formerly OSA) |
| ISBN (Print) | 9781943580767 |
| DOIs | |
| State | Published - 2020 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| Volume | Part F181-CLEO-AT 2020 |
| ISSN (Electronic) | 2162-2701 |
Bibliographical note
Funding Information:We acknowledge the support from KFUPM, KAUST (BAS/1/1614-01-01, REP/1/2878-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01), and KACST (EE2381 and KACST TIC R2-FP-008).
Publisher Copyright:
CLEO 2020 © OSA 2020 © 2020 The Author(s).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials