Abstract
Single and two-stage self-injection locking in InGaN/GaN laser diode is presented. Near single-mode emission with 34pm linewidth, and simultaneous locking of four longitudinal modes with appreciable 18dB SMSR and <2.5dB peak power ratio is achieved.
| Original language | English |
|---|---|
| Title of host publication | 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781943580767 |
| State | Published - May 2020 |
Publication series
| Name | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
|---|---|
| Volume | 2020-May |
| ISSN (Print) | 1092-8081 |
Bibliographical note
Funding Information:We acknowledge the support from KFUPM, KAUST (BAS/1/1614-01-01, REP/1/2878-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01), and KACST (EE2381 and KACST TIC R2-FP-008).
Publisher Copyright:
© 2020 OSA.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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