Sensing spin wave excitations by spin defects in few-layer- thick hexagonal boron nitride

  • Jingcheng Zhou
  • , Hanyi Lu
  • , Di Chen
  • , Mengqi Huang
  • , Gerald Q. Yan
  • , Faris Al-Matouq
  • , Jiu Chang
  • , Dziga Djugba
  • , Zhigang Jiang
  • , Hailong Wang*
  • , Chunhui Rita Du*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard"and "soft"condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy V- B spin defects contained in few-layer- thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by V- B spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and V- B spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.

Original languageEnglish
Article numberadk8495
JournalScience advances
Volume10
Issue number18
DOIs
StatePublished - May 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 The Authors.

ASJC Scopus subject areas

  • General

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