Scanning tunneling microscopy study of the structural phase transformation in manganese nitride: θ-MnN → η-Mn 3 N 2

R. Yang; M. B. Haider; H. Yang; H. Al-Brithen; A. R. Smith

doi:10.1007/s00339-005-3230-4

Scanning tunneling microscopy study of the structural phase transformation in manganese nitride: θ-MnN → η-Mn ₃ N ₂

R. Yang
, M. B. Haider
, H. Yang
, H. Al-Brithen
, A. R. Smith^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The phase transformation of a (001)-oriented θMnN thin film grown by molecular beam epitaxy to ηMn ₃N ₂ has been investigated using a combination of diffraction analysis and real-space surface analysis by scanning tunneling microscopy. The θMnN thin film is prepared by growth at 450 °C; it is then annealed at 550 °C. It is found that the phase transformation results in three different orientations of the ηMn ₃N ₂ phase within the annealed film. The phase transformation is attributed to diffusion and loss of N atoms and ordering of the N-vacancies into parallel sheets. A schematic model of the annealed film structure is presented.

Original language	English
Pages (from-to)	695-700
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	4
DOIs	https://doi.org/10.1007/s00339-005-3230-4
State	Published - Sep 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science

Access to Document

10.1007/s00339-005-3230-4

Cite this

@article{c96a9a3caa1a472fbdd0381a8ddaa4a3,

title = "Scanning tunneling microscopy study of the structural phase transformation in manganese nitride: θ-MnN → η-Mn 3 N 2",

abstract = "The phase transformation of a (001)-oriented θMnN thin film grown by molecular beam epitaxy to ηMn 3N 2 has been investigated using a combination of diffraction analysis and real-space surface analysis by scanning tunneling microscopy. The θMnN thin film is prepared by growth at 450 °C; it is then annealed at 550 °C. It is found that the phase transformation results in three different orientations of the ηMn 3N 2 phase within the annealed film. The phase transformation is attributed to diffusion and loss of N atoms and ordering of the N-vacancies into parallel sheets. A schematic model of the annealed film structure is presented.",

author = "R. Yang and Haider, \{M. B.\} and H. Yang and H. Al-Brithen and Smith, \{A. R.\}",

year = "2005",

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T2 - θ-MnN → η-Mn 3 N 2

AU - Yang, R.

AU - Haider, M. B.

AU - Yang, H.

AU - Al-Brithen, H.

AU - Smith, A. R.

PY - 2005/9

Y1 - 2005/9

N2 - The phase transformation of a (001)-oriented θMnN thin film grown by molecular beam epitaxy to ηMn 3N 2 has been investigated using a combination of diffraction analysis and real-space surface analysis by scanning tunneling microscopy. The θMnN thin film is prepared by growth at 450 °C; it is then annealed at 550 °C. It is found that the phase transformation results in three different orientations of the ηMn 3N 2 phase within the annealed film. The phase transformation is attributed to diffusion and loss of N atoms and ordering of the N-vacancies into parallel sheets. A schematic model of the annealed film structure is presented.

AB - The phase transformation of a (001)-oriented θMnN thin film grown by molecular beam epitaxy to ηMn 3N 2 has been investigated using a combination of diffraction analysis and real-space surface analysis by scanning tunneling microscopy. The θMnN thin film is prepared by growth at 450 °C; it is then annealed at 550 °C. It is found that the phase transformation results in three different orientations of the ηMn 3N 2 phase within the annealed film. The phase transformation is attributed to diffusion and loss of N atoms and ordering of the N-vacancies into parallel sheets. A schematic model of the annealed film structure is presented.

UR - https://www.scopus.com/pages/publications/22044438137

U2 - 10.1007/s00339-005-3230-4

DO - 10.1007/s00339-005-3230-4

M3 - Article

AN - SCOPUS:22044438137

SN - 0947-8396

VL - 81

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EP - 700

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4