Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy

Muhammad B. Haider; Rong Yang; Hamad Al-Brithen; Costel Constantin; Arthur R. Smith; Gabriel Caruntu; Charles J. O'Connor

Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy

Muhammad B. Haider
, Rong Yang
, Hamad Al-Brithen
, Costel Constantin
, Arthur R. Smith^*
, Gabriel Caruntu
, Charles J. O'Connor

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire (0001) at a sample temperature of 700°C, Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700°C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×l adlayer of Ga on GaN (000-1). Cr substitutes Ga on the surface when deposited at 700°C on the MBE grown GaN (000-1) surface for all the experiments, which we have performed, provided the Cr concentration is low (∼5%).

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	49-54
Number of pages	6
State	Published - 2006
Externally published	Yes

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{b23e1878732842b48761e0f841f0426c,

title = "Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy",

abstract = "Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire (0001) at a sample temperature of 700°C, Cr/Ga flux ratio was set to a value from 5\% to 20\%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700°C at a Cr concentration of 5\% and less. By increasing the Cr/Ga flux ratio to 20\% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×l adlayer of Ga on GaN (000-1). Cr substitutes Ga on the surface when deposited at 700°C on the MBE grown GaN (000-1) surface for all the experiments, which we have performed, provided the Cr concentration is low (∼5\%).",

author = "Haider, \{Muhammad B.\} and Rong Yang and Hamad Al-Brithen and Costel Constantin and Smith, \{Arthur R.\} and Gabriel Caruntu and O'Connor, \{Charles J.\}",

year = "2006",

language = "English",

isbn = "1558998462",

series = "Materials Research Society Symposium Proceedings",

pages = "49--54",

booktitle = "Materials Research Society Symposium Proceedings",

}

Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy. / Haider, Muhammad B.; Yang, Rong; Al-Brithen, Hamad et al.
Materials Research Society Symposium Proceedings. 2006. p. 49-54 (Materials Research Society Symposium Proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy

AU - Haider, Muhammad B.

AU - Yang, Rong

AU - Al-Brithen, Hamad

AU - Constantin, Costel

AU - Smith, Arthur R.

AU - Caruntu, Gabriel

AU - O'Connor, Charles J.

PY - 2006

Y1 - 2006

N2 - Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire (0001) at a sample temperature of 700°C, Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700°C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×l adlayer of Ga on GaN (000-1). Cr substitutes Ga on the surface when deposited at 700°C on the MBE grown GaN (000-1) surface for all the experiments, which we have performed, provided the Cr concentration is low (∼5%).

AB - Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire (0001) at a sample temperature of 700°C, Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700°C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×l adlayer of Ga on GaN (000-1). Cr substitutes Ga on the surface when deposited at 700°C on the MBE grown GaN (000-1) surface for all the experiments, which we have performed, provided the Cr concentration is low (∼5%).

UR - https://www.scopus.com/pages/publications/33646420361

M3 - Conference contribution

AN - SCOPUS:33646420361

SN - 1558998462

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 49

EP - 54

BT - Materials Research Society Symposium Proceedings

ER -

Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy

Abstract

Publication series

ASJC Scopus subject areas

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